Crossed Exciton States in Complex Semiconductor Nanostructures

Nina Owschimikow; Mirco Kolarczik; Yücel Kaptan; Nicolai B. Grosse; Ulrike Woggon

doi:10.1364/CLEO_SI.2015.SM1F.2

CLEO: 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper SM1F.2
•https://doi.org/10.1364/CLEO_SI.2015.SM1F.2

Crossed Exciton States in Complex Semiconductor Nanostructures

Nina Owschimikow, Mirco Kolarczik, Yücel Kaptan, Nicolai B. Grosse, and Ulrike Woggon

CLEO: Science and Innovations 2015

San Jose, California United States
10–15 May 2015
ISBN: 978-1-55752-968-8

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Semiconductor Laser Physics (SM1F)

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N. Owschimikow, M. Kolarczik, Y. Kaptan, N. B. Grosse, and U. Woggon, "Crossed Exciton States in Complex Semiconductor Nanostructures," in CLEO: 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper SM1F.2.

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Abstract

Based on gain excitation spectra derived from two-color pump-probe experiments, we identify crossed exciton states formed in semiconductor nanostructures of mixed dimensionality and investigate their influence on the carrier dynamics.

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