Enhanced Responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 Photoconductors by Integration of Interdigitated Electrodes

Thach Pham; Benjamin R. Conley; Joe Margetis; Huong Tran; Seyed Amir Ghetmiri; Aboozar Mosleh; Wei Du; Greg Sun; Richard A Soref; John Tolle; Hameed A. Naseem; Baohua Li; Shui-Qing Yu

doi:10.1364/CLEO_SI.2015.STh1I.7

CLEO: 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper STh1I.7
•https://doi.org/10.1364/CLEO_SI.2015.STh1I.7

Enhanced Responsivity up to 2.85 A/W of Si-based Ge_0.9Sn_0.1 Photoconductors by Integration of Interdigitated Electrodes

Thach Pham, Benjamin R. Conley, Joe Margetis, Huong Tran, Seyed Amir Ghetmiri, Aboozar Mosleh, Wei Du, Greg Sun, Richard A Soref, John Tolle, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu

CLEO: Science and Innovations 2015

San Jose, California United States
10–15 May 2015
ISBN: 978-1-55752-968-8

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Photodetectors (STh1I)

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T. Pham, B. R. Conley, J. Margetis, H. Tran, S. A. Ghetmiri, A. Mosleh, W. Du, G. Sun, R. A. Soref, J. Tolle, H. A. Naseem, B. Li, and S. Yu, "Enhanced Responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 Photoconductors by Integration of Interdigitated Electrodes," in CLEO: 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper STh1I.7.

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Abstract

The Ge_0.9Sn_0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.

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