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Si3N4 Multilayer Platform for Photonic Integrated Circuits

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Abstract

We design, fabricate, and demonstrate an optimized silicon nitride multilayer platform including ultra-low interlayer vertical coupling loss of 0.05 dB, multilayer crossing loss of 0.265 dB at 90° crossing angle, and 50 µm bending radius.

© 2015 Optical Society of America

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