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On-Chip Modulation in the Mid-Infrared with Silicon-on-Lithium-Niobate Photonics

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Abstract

Mid-infrared (3.39 μm) optical modulators are demonstrated for the first time on the silicon-on-lithium-niobate platform, with a Vπ·L of 26 V·cm, extinction ratio of 8 dB, and on-chip insertion losses of 3.3 dB.

© 2015 Optical Society of America

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