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Conferences > CLEO_SI > 2015 > SW3F > SW3F.1

Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C

Siming Chen, Mingchu Tang, Qi Jiang, Jiang Wu, Vitaliy G. Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Alwyn Seeds, and Huiyun Liu

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Abstract

A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been achieved by using InAlAs/GaAs strained-layer superlattices as dislocation filter layers.

© 2015 Optical Society of America

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