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Conferences > CLEO_SI > 2015 > SW4N > SW4N.3

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

T.-T. Kao, J. Kim, Y.-C. Lee, M.-H. Ji, A. Haq, T. Detchprohm, R. D. Dupuis, and S.-C. Shen

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Abstract

We present a high-performance InGaN/GaN heterojunction phototransistor with the responsivity (Rλ)> 8 (A/W), low noise-equivalent-power (NEP)< 1.1×10−17 (W-Hz−0.5) and high detectivity (D*)> 1.2×1014 (cm-Hz0.5-W−1).

© 2015 Optical Society of America

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