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Systematic Study of Si-Based Ge0.9Sn0.1 Light-Emitting Diodes towards Mid-Infrared Application

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Abstract

Characterizations of Ge/Ge0.9Sn0.1/Ge double heterostructure light-emitting diodes have been performed at the temperatures from 300 to 77K. The electroluminescence emission from the direct bandgap transition has been observed and systematically investigated.

© 2016 Optical Society of America

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