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Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells due to the incorporation of metallic nanocrystals

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Abstract

We report on the enhancement of light emission intensity in InGaN/GaN multiple quantum wells (MQW) in the visible spectral region due to an incorporation of metallic nanopartclies into the MQW stack. The InGaN/GaN MQWs were grown by metal organic chemical vapour deposition (MOCVD) and feature distinct surface features i.e. V-shaped hexagonal pits that arise at the apex of threading dislocations. Such crystalographicaly regular surface pits provide an elegant means of incorporation metallic nanocrystals with diameters below 30 nm, thus providing us a remarkable opportunity to engineer a metamaterial with improved optical properties (see figure 1).

© 2016 Optical Society of America

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