Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Tensile-Strained Ge/SiGe Quantum-Well Microdisks with overlying SiNx Stressors

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate Ge/SiGe multiple-quantum-well microdisks on Si substrates with SiNx stressors on top. The strain transferred from the SiNx to the Ge quantum wells are determined by photoluminescence and Raman measurements, and are in agreement with simulation results.

© 2016 Optical Society of America

PDF Article
More Like This
Ge/SiGe Quantum-well Micro-bridges with High Tensile Strain

Muyu Xue, Xiaochi Chen, Junyan Chen, Ming-Yen Kao, Colleen Shang, Kai Zang, Yijie Huo, Ching-Ying Lu, Yusi Chen, Huiyang Deng, Theodore I. Kamins, and James S. Harris
JTu5A.125 CLEO: Applications and Technology (CLEO:A&T) 2017

Calculation of enhanced direct-gap optical gain in uniaxial tensile strained and n+-doped Ge/GeSi quantum well

Jialin Jiang and Junqiang Sun
JTu4A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2016

Ge/SiGe Quantum-Well Photoconductors on Si for C-band Telecommunications

Shao-Wei Chen, Chia-Ho Tsai, and Guo-En Chang
14p_2D_6 JSAP-OSA Joint Symposia (JSAP) 2015

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.