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Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

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Abstract

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.

© 2016 Optical Society of America

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