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A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD

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Abstract

An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.

© 2016 Optical Society of America

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