Low Excess Noise AlxIn1-xAsySb1-y (x: 0.3~0.7) Avalanche Photodiodes

M. Ren; S. J. Maddox; M. E. Woodson; Y. Chen; S. R. Bank; J. C. Campbell

doi:10.1364/CLEO_SI.2016.STh1G.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper STh1G.1
•https://doi.org/10.1364/CLEO_SI.2016.STh1G.1

Low Excess Noise Al_xIn_1-xAs_ySb_1-y (x: 0.3~0.7) Avalanche Photodiodes

M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

From the session
Photodetectors (STh1G)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlxIn1-xAsySb1-y (x: 0.3~0.7) Avalanche Photodiodes," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper STh1G.1.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

We report avalanche photodiodes fabricated from a previously uncharacterized material system, Al_xIn_1-xAs_ySb_1-y digital alloy. A series of Al_xIn_1-xAs_ySb_1-y (x: 0.3~0.7) p-i-n avalanche photodiodes have been grown on GaSb substrate. Dark current characteristics, avalanche multiplication, external quantum efficiency, and excess noise are presented. Very low excess noise, corresponding to k = 0.03~0.05, has been observed.

PDF Article

More Like This

Low-Noise Digital Alloy Avalanche Photodiodes

Joe C. Campbell and Seth R. Bank
IW1B.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2018

A High Performance Avalanche Photodiode at 1.0-1.7 μm, Compatible with InP/GaxIn1−xAsyP1−y Integrated Optics Technology

T. P. Pearsall, E. Dipda, M. Papuchon, and G. Roullet
MC2 Integrated and Guided Wave Optics (IGWO) 1978

A Balanced Optical System for Excess Noise Factor Measurement of Avalanche Photodiode

Ke Wen, Junjie Tu, and Yanli Zhao
AF2A.67 Asia Communications and Photonics Conference (ACP) 2016

Previous Article Next Article