nm Deep UV LED Using GaN/AlN Heterostructures On Bulk AlN Substrates

SM Islam; Vladimir Protasenko; Huili (Grace) Xing; Debdeep Jena

doi:10.1364/CLEO_SI.2016.STu3R.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper STu3R.5
•https://doi.org/10.1364/CLEO_SI.2016.STu3R.5

nm Deep UV LED Using GaN/AlN Heterostructures On Bulk AlN Substrates

SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

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UV and Visible Optoelectronics (STu3R)

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S. Islam, V. Protasenko, H. (G. ) Xing, and D. Jena, "nm Deep UV LED Using GaN/AlN Heterostructures On Bulk AlN Substrates," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper STu3R.5.

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Abstract

A 250 nm deep UV LED is realized on the bulk AlN substrate. Leakage current is reduced significantly. Polarization doping is used for the p-region and GaN active region to enhance the light extraction.

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