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Tunable Photoresponse in InAs Nanowire Photodetectors Through Surface-State Engineering

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Abstract

We report on individual-InAs nanowire optoelectronic devices which, through surface-state engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

© 2017 Optical Society of America

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