Abstract
Polarizations in GaN surfaces are visualized using laser terahertz emission microscopy (LTEM). A non-radiative-inversion domain that is hardly distinguishable with photoluminescence imaging was observed with this method. The present study demonstrates that LTEM provides rich information about the surface polar states in GaN, which is crucial to improve the performance of GaN-based optoelectronic and power devices.
© 2017 Optical Society of America
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