Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Growth and Characterization of III-N Ultraviolet Lasers and Avalanche Photodiodes by MOCVD

Not Accessible

Your library or personal account may give you access

Abstract

The field of ultraviolet (UV) photonics at wavelengths λ<400nm is an area of increasing practical interest and coherent light sources and fast, sensitive photodetectors are needed for many important applications. The GaN-based near-UV lasers at ~370nm in this report were epitaxially grown on a c-axis n-type GaN:Si and (0001) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) and fabricated into optically pumped vertical-cavity UV lasers. Similar structures were grown incorporating p-n junctions to created micro-cavity UV LEDs. Also in this work, GaN UV PIPIN avalanche photodiodes (APDs) are grown on “free-standing” (FS) and “bulk” n-type (0001) GaN substrates having low dislocation densities by MOCVD and APDs were fabricated and tested.

© 2017 Optical Society of America

PDF Article
More Like This
Low-Noise GaN p-i-n Avalanche Photodiodes for Ultraviolet Applications Using an Ion-Implantation Isolation Technique

Minkyu Cho, Hoon Jeong, Chuan-Wei Tsou, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Russell D. Dupuis, and Shyh-Chiang Shen
AF1I.7 CLEO: Applications and Technology (CLEO:A&T) 2020

A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact

SeungGeun Lee, Charles A. Forman, Changmin Lee, Jared Kearns, John T. Leonard, Daniel A. Cohen, James S. Speck, Shuji Nakamura, and Steven P. DenBaars
SF1G.7 CLEO: Science and Innovations (CLEO:S&I) 2018

Structures of InGaAs Avalanche Photodiodes

Hiroshi Kanbe, Nobuhiko Susa, and Hiroaki Ando
WD1 Integrated and Guided Wave Optics (IGWO) 1980

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved