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Strain-Engineered SiGe Nanomembrane Quantum-Well Infrared Photodetectors

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Abstract

SiGe quantum-well nanomembranes, where stress from lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are used to develop intersubband photodetectors showing improved performance compared to identical devices grown on rigid substrates.

© 2017 Optical Society of America

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