Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2 Quantum Wells Light-Emitting Diodes

Not Accessible

Your library or personal account may give you access

Abstract

Closely lattice-matched Type-II InGaN-ZnGeN2 quantum well is analyzed as active region for high performance light emitters with the focus on studying the position and thickness dependence of the ZnGeN2 layer within the InGaN quantum well.

© 2017 Optical Society of America

PDF Article
More Like This
Analysis of Position and Thickness Dependences of Delta Layer in InGaN-Delta-InN Quantum Wells Light-Emitting Diodes

Hongping Zhao, Xuechen Jiao, and Nelson Tansu
ATh1F.2 Asia Communications and Photonics Conference (ACP) 2012

InGaN-ZnSnN2 Quantum Wells for High Efficiency Light Emitters Beyond Green

Md Rezaul Karim and Hongping Zhao
STh3I.2 CLEO: Science and Innovations (CLEO:S&I) 2018

Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes

Hongping Zhao, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Hua Tong, Jing Zhang, G.S. Huang, and Nelson Tansu
CThL1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved