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Conferences > CLEO_SI > 2017 > STh3I > STh3I.6

Temperature Dependent Diffusion Characterization of In(Ga)As/InAsSb Type-II Superlattice Infrared Detectors

N. Yoon, C. J. Reyner, G. Ariyawansa, J. E. Scheihing, J. Mabon, and D. Wasserman

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Abstract

We present the temperature dependent minority carrier mobility of Ga-content varying InGaAs/InAsSb superlattice infrared detectors by combining time-resolved photoluminescence and electron beam induced current measurements with a new numerical approach to minimize the uncertainty.

© 2017 Optical Society of America

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