Abstract

A site-controlled two-step metal organic chemical vapor deposition process is developed to monolithically integrate upright InP nanopillars on Silicon substrate at CMOS compatible temperatures and catalyst free conditions. Excellent crystal quality and a high quality factor of the intrinsic optical cavity result in optically pumped lasing at room temperature and 0.87 µm wavelength. Incorporation of multi quantum wells enables tuning of the emission wavelength and ultimately lasing at 1.21 µm, which represents the first realization of a silicon transparent III-V nanolaser monolithically integrated on Silicon substrate and a crucial achievement on the way towards on-chip optical links.

© 2017 Optical Society of America