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InAs/InAlGaAs Quantum Dot-on-Silicon Microdisk Lasers Operating at 1.55 μm

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Abstract

InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 µW and quality factor of 2200.

© 2017 Optical Society of America

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