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Conferences > CLEO_SI > 2018 > SM2I > SM2I.1

High-performance InGaAs/InP photodiodes on silicon using low-temperature wafer-bonding

Qianhuan Yu, Ye Wang, Linli Xie, Souheil Nadri, Keye Sun, Jizhao Zang, Qinglong Li, Robert M. Weikle, and Andreas Beling

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Abstract

We demonstrate back-illuminated III-V modified uni-traveling carrier photodiodes on silicon using SU-8 as the bonding layer. Responsivity at 1620nm, bandwidth, output RF power and OIP3 are 0.8A/W, 18GHz, 4dBm and 22.5dBm at 9GHz, respectively.

© 2018 The Author(s)

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