Abstract
The characteristics Ge0.89Sn0.11 photodiodes were systematically investigated. A cutoff wavelength of 2.65 μm at 300 K and the peak detectivity of 4.3×109 Jones at 77 K were achieved. An infrared imaging of an object was demonstrated using the single Ge0.89Sn0.11 photodiode.
© 2018 The Author(s)
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