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Conferences > CLEO_SI > 2019 > SM1O > SM1O.3

A low-power optoelectronic memory device based on MoS2/BN/graphene heterostructure

Hongzhu Jiang, Shuchao Qin, Anran Wang, and Fengqiu Wang

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Abstract

A low-power optoelectronic memory device is demonstrated by charge trapping in a MoS2/BN/graphene van der Waals heterostructure. The miniaturized structure, large current switching ratio (~6×105) and fast read/write speed (50 ms) suggest its potential in integrated non-volatile storage cell.

© 2019 The Author(s)

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