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50 Gb/s PAM4 Low-Voltage Si-Ge Avalanche Photodiode

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Abstract

We demonstrate a 50 Gb/s PAM4 operation of an integrated Si-Ge APD with low breakdown voltage of -10 V. The receiver has achieved -17 dBm optical input power at 50 Gb/s PAM4 with a bit error rate of 2.4×10-4.

© 2019 The Author(s)

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