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Triple reduction of threshold current for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si

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Abstract

Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by reducing the threading dislocation density, from 7 × 107 to 3 × 106cm−2.

© 2019 The Author(s)

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