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Intersubband Transitions in GaNZAl0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates

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We experimentally characterize mid-infrared intersubband transitions in identical Al0.5Ga0.5N/GaN heterostructures grown on a- and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane samples.

© 2020 The Author(s)

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