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Conferences > CLEO_SI > 2020 > STh3O > STh3O.5

High-Speed Broadband Plasmonic-Silicon Modulator Integrated with Epsilon-near-zero Conductive Oxide

Bokun Zhou, Erwen Li, Yunfei Bo, Wei-Che Hsu, and Alan X. Wang

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Abstract

We demonstrated a compact broadband plasmonic-silicon electro-absorption modulator driven by epsilon-near-zero conductive oxide, covering the entire C-band from 1515nm to 1580nm wavelength. It achieved 3.5 GHz modulation bandwidth and 4.5 Gb/s data rate.

© 2020 The Author(s)

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