Broadband, Integrated, Micron-Scale, All-Optical Si3N4/VO2 Modulators with pJ Switching Energy

Herman M. K. Wong; Zhizhong Yan; Kent A. Hallman; Robert E. Marvel; Rohit P. Prasankumar; Richard F. Haglund; Richard F. Haglund; Amr S. Helmy

doi:10.1364/CLEO_SI.2020.STh3R.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper STh3R.3
•https://doi.org/10.1364/CLEO_SI.2020.STh3R.3

Broadband, Integrated, Micron-Scale, All-Optical Si3N4/VO2 Modulators with pJ Switching Energy

Herman M. K. Wong, Zhizhong Yan, Kent A. Hallman, Robert E. Marvel, Rohit P. Prasankumar, Richard F. Haglund, and Amr S. Helmy

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Phase Change Material Devices (STh3R)

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H. M. K. Wong, Z. Yan, K. A. Hallman, R. E. Marvel, R. P. Prasankumar, R. F. Haglund, and A. S. Helmy, "Broadband, Integrated, Micron-Scale, All-Optical Si3N4/VO2 Modulators with pJ Switching Energy," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper STh3R.3.

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Abstract

All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/pm extinction ratio, and 4 pm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.

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