Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-stamping: Towards Light Sources on Silicon

Ghada Dushaq; Mahmoud Rasras

doi:10.1364/CLEO_SI.2020.STh4H.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper STh4H.3
•https://doi.org/10.1364/CLEO_SI.2020.STh4H.3

Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-stamping: Towards Light Sources on Silicon

Ghada Dushaq and Mahmoud Rasras

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Nonlinear Optical Transformation of Semiconductors (STh4H)

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G. Dushaq and M. Rasras, "Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-stamping: Towards Light Sources on Silicon," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper STh4H.3.

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Abstract

Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.

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