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Modulation of QCSE in InGaN-based LEDs with truncated- hexagonal-pyramid patterned-sapphire substrates

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Abstract

A method for the modulation of QCSE inside multiple-quantum wells of InGaN-based LEDs is proposed and confirmed with photoluminescence, Raman spectra, and electroluminescence using an integrating sphere.

© 2020 The Author(s)

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