Carrier dynamics in nitrogen-doped graphene under THz radiation

Roozbeh Anvari; Marc M. Dignam

doi:10.1364/CLEO_AT.2021.JTu3A.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper JTu3A.1
•https://doi.org/10.1364/CLEO_AT.2021.JTu3A.1

Carrier dynamics in nitrogen-doped graphene under THz radiation

Roozbeh Anvari and Marc M. Dignam

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Joint Poster Session I (JTu3A)

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R. Anvari and M. M. Dignam, "Carrier dynamics in nitrogen-doped graphene under THz radiation," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper JTu3A.1.

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Abstract

Nitrogen is a common impurity in graphene. We combine density functional tight binding theory and a density matrix formalism to calculate the effect of nitrogen doping on the linear and nonlinear carrier dynamics in graphene.

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