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QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

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Abstract

The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100 °C.

© 2021 The Author(s)

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