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Conferences > CLEO_SI > 2021 > JW1A > JW1A.145

Improvement of GaN Epitaxial Layer and AlGaN/GaN HEMTs by Patterned Sapphire Substrate Technology

Cheng-Che Lee, Hsin-Jung Lee, Chien-Tsun Chan, and Chieh-Hsiung Kuan

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Abstract

A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved.

© 2021 The Author(s)

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