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III-V-on-Silicon-Nitride Mode-Locked Laser with 2 pJ On-Chip Pulse Energy

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Abstract

We demonstrate a III-V-on-silicon-nitride electrically pumped mode-locked laser emitting at λ = 1.6 μm with an on-chip pulse energy of approximately 2 pJ, significantly higher than on III-V-on-Si and InP photonic integration platforms.

© 2021 The Author(s)

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