Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Warren Jin; Qi-Fan Yang; Lin Chang; Boqiang Shen; Heming Wang; Mark A. Leal; Lue Wu; Maodong Gao; Avi Feshali; Mario Paniccia; Kerry J. Vahala; John E. Bowers

doi:10.1364/CLEO_SI.2021.SM1A.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper SM1A.2
•https://doi.org/10.1364/CLEO_SI.2021.SM1A.2

Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Warren Jin, Qi-Fan Yang, Lin Chang, Boqiang Shen, Heming Wang, Mark A. Leal, Lue Wu, Maodong Gao, Avi Feshali, Mario Paniccia, Kerry J. Vahala, and John E. Bowers

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Active and Passive Photonic Integration (SM1A)

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W. Jin, Q. Yang, L. Chang, B. Shen, H. Wang, M. A. Leal, L. Wu, M. Gao, A. Feshali, M. Paniccia, K. J. Vahala, and J. E. Bowers, "Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper SM1A.2.

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Abstract

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundry- fabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz² Hz^-1 and yielding instantaneous linewidth of 1.2 Hz.

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