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Conferences > CLEO_SI > 2021 > STh2C > STh2C.1

Giant Enhancement of Photovoltage from InGaAs-Channel Dual-Grating-Gate HEMT THz Detector due to Nonlinear Rectification Effect at InGaAs/InAlAs Heterobarrier

Akira Satou, Tomotaka Hosotani, Takumi Negoro, Yuma Takida, Hiromasa Ito, Hiroaki Minamide, and Taiichi Otsuji

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Abstract

We experimentally demonstrate the photovoltage from an InGaAs-channel dual-grating-gate HEMT THz detector in the gate-readout configuration is significantly enhanced by the positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.

© 2021 The Author(s)

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More Like This
Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

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