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InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration

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Abstract

We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections ( = 1550 nm) suitable for heterogeneous integration with SiNx PICs. The structures exhibit desired electrical performance and support lasing.

© 2021 The Author(s)

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More Like This
Heterogeneously Integrated III-V Lasers Fabricated Using Epitaxial Growth on an InP/SiO2/Si Substrate

Takuro Fujii, Koji Takeda, Hidetaka Nishi, and Shinji Matsuo
Tu3K.2 Optical Fiber Communication Conference (OFC) 2018

A Silicon Photonics Platform with Heterogeneous III-V Integration

Wim Bogaerts, Shankar Kumar Selvaraja, Hui Yu, Thijs Spuessens, Pauline Mechet, Stevan Stankovic, Shahram Keyvaninia, Joris Van Campenhout, Philippe Absil, Gunther Roelkens, Dries Van Thourhout, and Roel Baets
IWC2 Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) 2011

Heterogeneous III-V / Si Photonic Integration

John E. Bowers
SM1G.1 CLEO: Science and Innovations (CLEO_SI) 2016

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