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Broadband photodetection of MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor

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Abstract

MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor is fabricated, which can detect from VIS to NIR. The responsivities are 35.21 and 133.56 A/W at 466 and 1550 nm, respectively. Photocurrent amplification of BHP, 6 times larger than photocurrent of p-Ge/n-Ge and p-Ge/MoS2 photodiodes.

© 2021 The Author(s)

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More Like This
Active Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity

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IM5A.2 Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) 2021

GeSn Heterojunction Phototransistors on Silicon for High-Responsivity Short-Wave Infrared Photodetection

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21a_211B_4 JSAP-OSA Joint Symposia (JSAP) 2018

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SW4N.3 CLEO: Science and Innovations (CLEO_SI) 2015

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