Broadband photodetection of MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor

Youngseo Park; Au Jin Hwang; Chanho Lee; Geonwook Yoo; Junseok Heo

doi:10.1364/CLEO_SI.2021.STh5B.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper STh5B.3
•https://doi.org/10.1364/CLEO_SI.2021.STh5B.3

Broadband photodetection of MoS₂/p-Ge/n-Ge bipolar heterojunction phototransistor

Youngseo Park, Au Jin Hwang, Chanho Lee, Geonwook Yoo, and Junseok Heo

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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2D Materials and Topological Photonics (STh5B)

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Y. Park, A. J. Hwang, C. Lee, G. Yoo, and J. Heo, "Broadband photodetection of MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper STh5B.3.

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Abstract

MoS₂/p-Ge/n-Ge bipolar heterojunction phototransistor is fabricated, which can detect from VIS to NIR. The responsivities are 35.21 and 133.56 A/W at 466 and 1550 nm, respectively. Photocurrent amplification of BHP, 6 times larger than photocurrent of p-Ge/n-Ge and p-Ge/MoS₂ photodiodes.

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