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Gate-Controlled Schottky Heterojunctions Photodetector Based on Graphene-Silicon-Graphene

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Abstract

We report a graphene-silicon-graphene-based photodetector with two opposite Schottky heterojunctions. Through the tuning of gate voltage, the device can obtain high photoconductivity gain and achieve excellent optical detection performance.

© 2021 The Author(s)

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More Like This
Silicon-Graphene Heterojunction Waveguide Photodetector with a 3dB-bandwidth of >14 GHz

Chaoyue Liu, Jingshu Guo, Laiwen Yu, Yuluan Xiang, and Daoxin Dai
T4A.205 Asia Communications and Photonics Conference (ACPC) 2021

High Responsivity Silicon-Graphene Schottky Avalanche Photodetectors for Visible and Telecom Wavelengths

Ilya Goykhman, Anna Eiden, Domenico De Fazio, Ugo Sassi, Matteo Barbone, and Andrea C. Ferrari
STh1I.4 CLEO: Science and Innovations (CLEO_SI) 2015

High Responsivity Graphene-SOI Heterojunction Photodetectors and Imaging Array

Che-Hung Liu, You-Chia Chang, Fuxi Cai, Miao-Bin Lien, Dehui Zhang, Wei Lu, Theodore B Norris, and Zhaohui Zhong
STu4F.2 CLEO: Science and Innovations (CLEO_SI) 2016

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