High responsivity GaAs photodiodes with self-embedded graphene quantum dots through one-step chemical etching

Hsien-Chih Huang; Shunya Namiki; Julio Soares; Xihang Wu; Jeong Dong Kim; Bill Jiang; Vaanchit Srikumar; Xiuling Li

doi:10.1364/CLEO_SI.2021.STh5B.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper STh5B.5
•https://doi.org/10.1364/CLEO_SI.2021.STh5B.5

High responsivity GaAs photodiodes with self-embedded graphene quantum dots through one-step chemical etching

Hsien-Chih Huang, Shunya Namiki, Julio Soares, Xihang Wu, Jeong Dong Kim, Bill Jiang, Vaanchit Srikumar, and Xiuling Li

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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2D Materials and Topological Photonics (STh5B)

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H. Huang, S. Namiki, J. Soares, X. Wu, J. D. Kim, B. Jiang, V. Srikumar, and X. Li, "High responsivity GaAs photodiodes with self-embedded graphene quantum dots through one-step chemical etching," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper STh5B.5.

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Abstract

GaAs photodiodes with self-embedded graphene quantum dots and antireflection texture are formed by one-step etching. An enhancement of photocurrent and photoresponsivity (9.31mA/W) by ~22X and ~25X, respectively, with respect to the planar counterpart is demonstrated.

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