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C and L band 1×12 AWG based on 3-μm SOI platform with 100 GHz channel spacing and low polarization sensitivity

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Abstract

C- and L-band polarization insensitive 1×12 AWG with 100GHz channel-spacing is fabricated on SOI. Results show <3.8dB loss, <-30dB crosstalk, <2.6dB polarization dependent loss, <0.1nm polarization dependent wavelength shift and <0.3dB BER penalty at 10Gbps.

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