Ultrafast Carrier Dynamics in (Bi1-xInx)2Se3 Thin Films: From Topological to Band Insulator

Kateryna Kushnir; Teng Shi; Zhengtianye Wang; Stephanie Law; Lyubov Titova

doi:10.1364/CLEO_SI.2021.SW4F.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper SW4F.5
•https://doi.org/10.1364/CLEO_SI.2021.SW4F.5

Ultrafast Carrier Dynamics in (Bi_1-xIn_x)₂Se₃ Thin Films: From Topological to Band Insulator

Kateryna Kushnir, Teng Shi, Zhengtianye Wang, Stephanie Law, and Lyubov Titova

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Terahertz Spectroscopy and Applications (SW4F)

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K. Kushnir, T. Shi, Z. Wang, S. Law, and L. Titova, "Ultrafast Carrier Dynamics in (Bi1-xInx)2Se3 Thin Films: From Topological to Band Insulator," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper SW4F.5.

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Abstract

Replacing some of the Bi atoms with In transforms Bi₂Se₃ from a topological to a band insulator. We have used time-resolved terahertz spectroscopy to study carrier dynamics in (Bi_1-_xIn_x)₂Se₃ films across this transition.

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