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250C Process for < 2dB/m Ultra-Low Loss Silicon Nitride Integrated Photonic Waveguides

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Abstract

We report fabrication of CMOS-compatible Si3N4 waveguides, including resonators, with 2.0dB/m loss as well as 11.18million loaded Q at 1550nm, using a maximum temperature of 250C during and after Si3N4 deposition, enabling system-on-chip integration.

© 2022 The Author(s)

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More Like This
Low-loss D-shape Silicon Nitride Waveguides Using a Dielectric Lift-off Fabrication Process

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