Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Hao Liu; Xuecheng Liu; Bing Xiong; Bing Xiong; Changzheng Sun; Changzheng Sun; Zhibiao Hao; Zhibiao Hao; Lai Wang; Jian Wang; Jian Wang; Yanjun Han; Yanjun Han; Yanjun Han; Hongtao Li; Hongtao Li; Yi Luo; Yi Luo; Yi Luo

doi:10.1364/CLEO_SI.2022.SF4G.5

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper SF4G.5
•https://doi.org/10.1364/CLEO_SI.2022.SF4G.5

Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Hao Liu, Xuecheng Liu, Bing Xiong, Changzheng Sun, Zhibiao Hao, Lai Wang, Jian Wang, Yanjun Han, Hongtao Li, and Yi Luo

CLEO: Science and Innovations 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Novel Materials Integration (SF4G)

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H. Liu, X. Liu, B. Xiong, C. Sun, Z. Hao, L. Wang, J. Wang, Y. Han, H. Li, and Y. Luo, "Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper SF4G.5.

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Abstract

A thin-film lithium niobate modulator employing low-loss capacitively-loaded traveling-wave electrodes terminated by an on-chip resistor is demonstrated, with 6-dB electrical bandwidth over 150 GHz, ultra-flat electro-optic response and low half-wave voltage of 2 V.

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