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Conferences > CPS > 1997 > CMA > CMA.3

Formation and Chemical Reactivity of Partially Ga-terminated Si(111) Surfaces

Masakazu Ichikawa, Ken Fujita, and Yukihiro Kusumi

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Abstract

The passivation of semiconductor surfaces by adsorbates is prospective to construct nanoscale structures such as quantum wires and dopings. Since the adsorption and dissociation of gas molecules supplied on a surface depend on the local chemical reactivity on the surface, selective adsorption or growth is realized on the nanometer scale by removing the adsorbates for the passivation with atomic accuracy.

© 1997 Optical Society of America

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