Abstract

In the past, several adsorbates have been used to change thin film growth modes. This has been explained to occur by either modification of surface energetics or growth kinetics. In the present work, we study adsorbate - mediated Al film growth in order to address how initial surface chemistry can be used to tailor film microstructure, both at the early stages of growth (~1 monolayer. ML) and for thick layers(~1000MLs). For this investigation. Al thin film growth onto Si involves physical vapor deposition.

© 1997 Optical Society of America