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Conferences > CPS > 1997 > CSuA > CSuA.2

Silicon Tunneling Devices Fabricated on SOI

Akira Toriumi

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Abstract

The tunneling is a very promising operation principle for the future electron devices, because it is very sensitive to the applied voltage, little dependent on the ambient temperature, and becomes more evident with the size miniaturization. We will discuss two kinds of tunneling devices fabricated on SOI (Silicon-On-Insulator).

© 1997 Optical Society of America

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