Abstract

Electronic devices often incorporate layers of different semiconductors, which are intended to be smooth and uniform. However, additional interesting structures sometimes develop spontaneously. These include step bunches, facets, composition modulations, and even spontaneous formation of vertical or lateral superlattices. These "accidental" structures, if they can be controlled, may have numerous applications. However, understanding and control have been hampered by the lack of simple models which describe realistic growth conditions (including strain). I will describe calculations of step-flow growth, including strain and alloy decomposition. The results point up several opportunities for controlled self-assembly and self-organization of nanostructures.

© 1997 Optical Society of America