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Formation and electronic properties of sidewall quantum wires on patterned GaAs (311)A substrates.

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Abstract

The natural formation of nanometer-scale structures on high-index semiconductor surfaces during molecular beam epitaxy (MBE) [1] and metalorganic vapor phase epitaxy (MOVPE) [2] has opened a new pathway for the realization of quantum-wire and dot arrays. Even higher flexibility in the formation of nanostructures on high-index semiconductor surfaces can be realized by growth on patterned substrates. Patterning provides an additional degree of freedom for the control of the size and, most important, allows the precise placing of the nanostructures desired for applications in devices.

© 1997 Optical Society of America

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